     
 
|
|
|
|
| |
The MR4A16B is a 16,777,216-bit magnetoresistive random access memory (MRAM) device organized as 1,048,576 words of 16 bits. The MR4A16B offers SRAM compatible 35 ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. To simplify fault tolerant design, MR4A16B includes internal single bit error correction code with 7 ECC parity bits for every 64 data bits. The MR4A16B is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly.
The MR4A16BMYS35R is the 54-pin TSOP2 package option operating over the AEC-Q100 Grade 1 temperature range (-40 to +125°C) and shipped in tape and reel.
| • |
Density: 16Mb |
| • |
Configuration: 1Mbx16 |
| • |
Temp.: -40 to +125°C |
| • |
Rating: AEC-Q100 GRADE 1 |
| • |
Package: 54-TSOP2 |
| • |
Batteries: No battery assembly, reliability, or liability issues |
| • |
Green: RoHS-Compliant, No batteries, no Pb, no Phosphorus |
|
| • |
Speed: 35ns |
| • |
Voltage (V): 3.3 |
| • |
Endurance: Unlimited Read/Write Endurance |
| • |
Data Retention: Data Retained For >20-Years Without Backup Cycle |
| • |
Universal Memory: Functional equivalent of asynchronous SRAM |
| • |
Delivery: TAPE & REEL |
|
|
 |
 |
|
|
|
|
|
|
|
|
