EverSpinISO9001 Certified   HOME  :  FEEDBACK  :  CONTACT US  :  CAREERS  
Enter Everspin or Competitor Part #  
Everspin Site Search  
header Overview shim Show All Products shim Sample Request
Product Selector 16 bit I/O :: 16Mb : 4Mb : 1Mb Sales Inquiry
Quality & Reliability 8 bit I/O :: 16Mb : 4Mb : 1Mb : 256Kb Help Desk
Technical Resources Serial I/O :: 4Mb : 1Mb : 256Kb Product Archive





Everspin’s MRAM technology revolutionizes non-volatile memory by storing data using magnetic polarization rather than electric charge. With infinite read and write endurance, MRAM retains data for decades without the need for a battery.

Parallel MRAMs (8 & 16-bit) are controlled with standard SRAM asynchronous timing interfaces. Serial MRAM have the same SPI interface as Flash and EEPROM but with fast 40 MHz clock speed and no write delays. Quad Serial MRAM devices have a quad I/O mode that will support quadruple I/O interface at clock rates up to 104MHz.

Standard asynchronous, parallel MRAM products are available from 256Kb to 16Mb densities. Serial MRAMs are available in densities from 256Kb to 4Mb.

Everspin products are available in 48– and 54-pin TSOP2, 32- and 16-pin SOIC and small footprint, low profile 48-ball FBGA and 8-land DFN packages to save board space in compact designs. All Everspin packages are lead free and RoHS compliant.

Everspin offers MRAM products with options to operate in four temperature ranges
  •  AEC-Q100 Grade 1:      -40 °C to 125 °C
  •  Extended Temperature:      -40 °C to 105 °C
  •  Industrial Temperature:      -40 °C to 85 °C
  •  Commercial Temperature:      -0 °C to 70 °C


Everspin MRAM Features:
• SRAM read/write cycle time
• Unlimited read/write endurance
• Non-volatile for greater than 20-years
• Commercial, industrial, extended temperatures

Everspin MRAM Benefits:
• Small footprint—up to 16 Mb in one chip
• Fast, simple interfaces—Parallel SRAM or Serial SPI
• Simple one transistor, one magnetic tunnel junction (1T-1MTJ) bit cell
• Best-in-class soft error rate
• RoHS compliant—no battery, no lead (Pb)
• Replaces multiple memories — Combines functions of Flash, SRAM, EEPROM, nvRAM, BBSRAM

Award-winning MRAM Products:
• MIT Technology Review selected MRAM “Toggle” as one of the key discoveries of 2003
• Recognized as one of the 5 Killer Patents in the May 2004 “Invention Issue”
• Named Product of the Year by Electronic Products
• Won In-Stat’s Innovation Award
• Won R&D Magazine — Top 100 Inventions of 2007
• Won Design News Golden Mousetrap Award

Copyright © 2008-2014 Everspin Technologies, Inc. - 1347 N. Alma School Road, Suite 220 Chandler, AZ 85224 - Tel: 480-347-1111 - e-mail: contact@everspin.com