Published:
September 16, 2015
Semiconductor Engineering, by Mark Lapedus.
Gaps in the memory hierarchy have created openings for new types of memory, and there is no shortage of possibilities.
The next big thing is a second-generation MRAM technology called spin-transfer torque MRAM (STT-MRAM). STT-MRAM is an effect in which the orientation of a magnetic layer in a magnetic tunnel junction (MTJ) can be modified using a spin-polarized current.